Hydrogen sensing properties of a Pd/oxide/InAlAs metamorphic-based transistor

International Journal of Hydrogen Energy

Volumn 35, Issue 8, 2010, Pages 3903-3907

  Tsai, Tsung Han ^a   Chen, Huey Ing ^a   Chen, Tai Yu ^a   Chen, Li Yang ^a   Liu, Yi Jung ^a   Huang, Chien Chang ^a   Hsu, Kai Siang ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Hydrogen; MHEMT; Oxide; Pd

Indexed keywords

FAST RESPONSE; HIGH SENSITIVITY; HYDROGEN ADSORPTION; HYDROGEN SENSING PROPERTIES; HYDROGEN SENSOR; HYDROGEN-SENSING; METAL OXIDE SEMICONDUCTOR; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; MHEMT; RESPONSE TIME; THERMO DYNAMIC ANALYSIS;

CHEMICAL SENSORS; ELECTRON MOBILITY; HIGH ELECTRON MOBILITY TRANSISTORS; HYDROGEN; PALLADIUM; THERMOANALYSIS; TRANSISTORS;

GAS ADSORPTION;

EID: 77950297760     PISSN: 03603199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijhydene.2010.01.058     Document Type: Article

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