Characteristics of a Pd-oxide-In0.49Ga0.51P high electron mobility transistor (HEMT)-based hydrogen sensor

Sensors and Actuators, B: Chemical

Volumn 113, Issue 1, 2006, Pages 29-35

  Cheng, Chin Chuan ^a   Tsai, Yan Ying ^a   Lin, Kun Wei ^b,c,d   Chen, Huey Ing ^a,d   Hsu, Wei Hsi ^a   Hong, Ching Wen ^a   Liu, Wen Chau ^a,d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHIENKUO TECHNOLOGY UNIVERSITY   (Taiwan)

^c Chien Kuo Technology University

^d Chien Kuo Technology University ^*

Author keywords

Catalytic metal; HEMT; Hydrogen sensor; InGaP Schottky diode; Response time

Indexed keywords

CATALYTIC METALS; HYDROGEN SENSORS; INGAP SCHOTTKY DIODE; RESPONSE TIME;

HIGH ELECTRON MOBILITY TRANSISTORS; HYDROGEN; INTEGRATED CIRCUITS; MICROELECTROMECHANICAL DEVICES; SEMICONDUCTING INDIUM PHOSPHIDE; THERMODYNAMIC PROPERTIES;

SENSORS;

EID: 29244481462     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2005.02.019     Document Type: Article

References (26)

1. J.S. Lee, J.W. Park, and S.M. Shin Fabrication of a micro catalytic gas sensor using thin film process and Si anisotropic etching techniques Sens. Actuators B 45 1997 265 269
2. A. Salehi, and A. Nikfarjam Room temperature carbon monoxide sensor using ITO/n-GaAs Schottky contact Sens. Actuators B 101 2004 394 400
3. H.I. Chen, Y.I. Chou, and C.Y. Chu A novel high-sensitive Pd/InP hydrogen sensor fabricated by electroless plating Sens. Actuators B 85 2002 10 18
4. L.Y. Chen, G.W. Hunter, P.G. Neudeck, and D. Knight Surface and interface properties of PdCr/SiC Schottky diode gas sensor annealed at 425 °C Solid-State Electron. 42 1998 2209 2214
5. B.P. Luther, S.D. Wolter, and S.E. Mohney High temperature Pt Schottky diode gas sensors on n-type GaN Sens. Actuators B 56 1999 164 168
6. Y. Gurbuz, W.P. Kang, J.L. Davidson, and D.V. Kerns A novel oxygen gas sensor utilizing thin film diamond diode with catalyzed tin oxide electrode Sens. Actuators B 36 1996 303 307
7. I. Lundström, S. Shivaraman, C. Svensson, and L. Lundkvist A hydrogen-sensitive MOS field effect transistor Appl. Phys. Lett. 26 1975 55 57
8. H. Wingbrant, I. Lundström, and A. Lloyd Spetz The speed of response of MISiCFET devices Sens. Actuators B 93 2003 286 294
9. I. Eisele, T. Doll, and M. Burgmair Low power gas detection with FET sensors Sens. Actuators B 78 2001 19 25
10. S.Y. Cheng A hydrogen sensitive Pd/GaAs Schottky diode sensor Mater. Chem. Phys. 78 2002 525 528
11. H.I. Chen, and Y.I. Chou Comparative study of hydrogen sensing performances between electroless plated and thermal evaporated Pd/InP Schottky diodes Semicond. Sci. Technol. 18 2003 104 110
12. 0.4 substrates by gas source molecular beam epitaxy Electron. Lett. 30 1994 2049 2050
13. H. Uenohara, K. Tateno, T. Kagawa, and C. Amano All MOCVD grown 850-nm-wavelength refractive-index-guided semiconductor-buried vertical-cavity surface-emitting lasers with p/n-InGaP current blocking layers IEEE Photon. Technol. Lett. 12 2000 600 602
14. 0.51P/GaAs single and double delta-doped pseudomorphic high electron mobility transistors (δ-PHEMTs) Solid-State Electron. 45 2001 309 314
15. 0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing Semicond. Sci. Technol. 16 2001 826 830
16. J.H. Tsai, K.P. Zhu, Y.C. Chu, and S.Y. Chiu InGaP/InGaAs/GaAs camel-gate p-channel pseudomorphic modulation-doped field effect transistor Electron. Lett. 39 2003 1611 1612
17. M. Takashi, J. Kazukiyo, and K. Shigeru Device modeling of HEMT Fujitsu Sci. Technol. J. 19 1983 243 278
18. 2 interfaces J. Appl. Phys. 82 1997 3143 3146
19. I. Lundström, and L.G. Petersson Chemical sensors with catalytic metal gates J. Vac. Sci. Technol. A 14 1996 1539 1545
20. Y.Y. Tsai, K.W. Lin, H.I. Chen, C.T. Lu, H.M. Chuang, C.Y. Chen, and W.C. Liu Comparative hydrogen sensing performance of Pd- and Pt-InGaP metal-oxide-semiconductor Schottky diodes J. Vac. Sci. Technol. B 21 2003 2471 2477
21. I. Lundström Hydrogen sensitive MOS-structures. Part 1. Principles and applications Sens. Actuators 1 1981 403 426
22. A. Spetz, M. Armgarth, and I. Lundström Hydrogen and ammonia response of metal-silicon dioxide-silicon structures with thin platinum gates J. Appl. Phys. 64 1988 1274 1283
23. 4 at high temperature Sens. Actuators B 77 2001 455 462
24. R.J. Silbey, and R.A. Alberty Physical Chemistry 3rd ed. 2001 Willey New York
25. 2 interfaces J. Appl. Phys. 82 1997 3143 3146
26. W.C. Liu, H.J. Pan, H.I. Chen, K.W. Lin, and C.K. Wang Comparative hydrogen-sensing study of Pd/GaAs and Pd/InP metal-oxide-semiconductor Schottky diodes Jpn. J. Appl. Phys. 40 2001 6254 6259