Hydrogen sensing properties of a metamorphic high electron mobility transistor

Applied Physics Letters

Volumn 94, Issue 1, 2009, Pages

  Tsai, Tsung Han ^a   Chen, Huey Ing ^a   Chang, Chung Fu ^a   Chiu, Po Shun ^a   Liu, Yi Chun ^a   Chen, Li Yang ^a   Chen, Tzu Pin ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CHEMICAL SENSORS; ELECTRON MOBILITY; HIGH ELECTRON MOBILITY TRANSISTORS; HYDROGEN; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NONMETALS; RESONANT TUNNELING; SENSITIVITY ANALYSIS; SURFACE REACTIONS; THRESHOLD VOLTAGE; TRANSISTORS;

BASE-LINES; CURRENT RESPONSES; FAST RESPONSES; HYDROGEN ADSORPTIONS; HYDROGEN GASES; HYDROGEN SENSING PROPERTIES; LARGE CURRENTS; LOW SENSITIVITIES; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; SIMULATED CURVES;

GAS ADSORPTION;

EID: 58149522468     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3052698     Document Type: Article

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