SiO2 passivation effect on the hydrogen adsorption performance of a Pd/AlGaN-based Schottky diode

Sensors and Actuators, B: Chemical

Volumn 136, Issue 2, 2009, Pages 338-343

  Tsai, Tsung Han ^a   Chen, Huey Ing ^a   Lin, Kun Wei ^b   Kuo, Yaw Wen ^c   Chang, Chung Fu ^a   Hung, Ching Wen ^a   Chen, Li Yang ^a   Chen, Tzu Pin ^a   Liu, Yi Chun ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHAOYANG UNIVERSITY OF TECHNOLOGY   (Taiwan)

^c NATIONAL CHI NAN UNIVERSITY   (Taiwan)

Author keywords

AlGaN; Hydrogen; Passivation; Schottky diode

Indexed keywords

ACTIVATION ENERGY; ADSORPTION; DIODES; HYDROGEN; PASSIVATION; SCHOTTKY BARRIER DIODES;

ALGAN; HYDROGEN ADSORPTION; HYDROGEN-SENSING; OPERATING TEMPERATURE; PASSIVATION EFFECT; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES; SENSING RESPONSE;

GAS ADSORPTION;

EID: 60749090355     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2008.12.030     Document Type: Article

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