Comprehensive study of a Pd-GaAs high electron mobility transistor (HEMT)-based hydrogen sensor

Sensors and Actuators, B: Chemical

Volumn 122, Issue 1, 2007, Pages 81-88

  Hung, Ching Wen ^a   Lin, Han Lien ^a   Chen, Huey Ing ^a   Tsai, Yan Ying ^a   Lai, Po Hsien ^a   Fu, Ssu I ^a   Chuang, Hung Ming ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Equilibrium; HEMT; Kinetics; Palladium

Indexed keywords

CHEMICAL SENSORS; ELECTRIC PROPERTIES; OXIDATION; PALLADIUM; PHASE EQUILIBRIA; SEMICONDUCTING GALLIUM ARSENIDE;

EQUILIBRIUM ADSORPTION; HYDROGEN ATOMS; KINETIC ADSORPTION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33847055464     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2006.05.007     Document Type: Review

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