High indium metamorphic HEMT on a GaAs substrate

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 827-831

  Hoke, W E ^a   Kennedy, T D ^a   Torabi, A ^a   Whelan, C S ^a   Marsh, P F ^a   Leoni, R E ^a   Xu, C ^b   Hsieh, K C ^b  

^a RAYTHEON COMPANY   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

A1. Line defects; A3. Molecular beam epitaxy; B2. Semiconducting ternary compounds

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; SURFACE ROUGHNESS; TRANSCONDUCTANCE; TRANSMISSION ELECTRON MICROSCOPY;

METAMORPHIC TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037381501     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02373-4     Document Type: Conference Paper

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