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Volumn 48, Issue 4 PART 2, 2009, Pages

Investigation of InAlAs oxide/inp metal-oxide-semiconductor structures formed by wet thermal oxidation

(7) Nakagawa, Shota a Yokoyama, Masafumi a Ichikawa, Osamu b Hata, Masahiko b Tanaka, Masaaki b Takenaka, Mituru b Takagi, Shinichi a

a UNIVERSITY OF TOKYO (Japan)

b SUMITOMO CHEMICAL CO LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; CONDUCTANCE METHOD; FREQUENCY DISPERSION; III-V COMPOUNDS; INALAS; INP SUBSTRATES; INTERFACE TRAP DENSITY; METAL OXIDE SEMICONDUCTOR STRUCTURES; MOS INTERFACE; OXIDE LAYER; P-OXIDE; PROCESS TEMPERATURE; WET THERMAL OXIDATIONS;

CAPACITANCE; DIELECTRIC DEVICES; OXIDATION; SEMICONDUCTING SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

MOS CAPACITORS;

EID: 77950296535 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.04C093 Document Type: Article

Times cited : (9)

References (13)

1
- 50249144058
- Y. Xuan, Y. Q. Wu, T. Shen, T. Yang, and P. D. Ye: IEDM Tech. Dig., 2007, p. 637.
- (2007) IEDM Tech. Dig. , pp. 637
- Xuan, Y.¹ Wu, Y.Q.² Shen, T.³ Yang, T.⁴ Ye, P.D.⁵

2
- 44349146000
- I. Ok, H. Kim, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, D. Garcia, P. Majhi, N. Goel, W. Tsai, C. K. Gaspe, M. B. Santos, and J. C. Lee: Appl. Phys. Lett. 92 (2008) 202903.
- (2008) Appl. Phys. Lett. , vol.92 , pp. 202903
- Ok, I.¹ Kim, H.² Zhang, M.³ Zhu, F.⁴ Park, S.⁵ Yum, J.⁶ Zhao, H.⁷ Garcia, D.⁸ Majhi, P.⁹ Goel, N.¹⁰ Tsai, W.¹¹ Gaspe, C.K.¹² Santos, M.B.¹³ Lee, J.C.¹⁴

3
- 1242332746
- P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H.-J. L. Gossmann, M. Hong, K. K. Ng, and J. Bude: Appl. Phys. Lett. 84 (2004) 434.
- (2004) Appl. Phys. Lett. , vol.84 , pp. 434
- Ye, P.D.¹ Wilk, G.D.² Yang, B.³ Kwo, J.⁴ Gossmann, H.-J.L.⁵ Hong, M.⁶ Ng, K.K.⁷ Bude, J.⁸

4
- 34547210682
- Y. Q. Wu, Y. Xuan, T. Shen, and P. D. Ye: Appl. Phys. Lett. 91 (2007) 022108.
- (2007) Appl. Phys. Lett. , vol.91 , pp. 022108
- Wu, Y.Q.¹ Xuan, Y.² Shen, T.³ Ye, P.D.⁴

5
- 45149086618
- H. Zhao, D. Shahrjerdi, F. Zhu, M. Zhang, H.-S. Kim, I. Ok, J. H. Yum, S. I. Park, S. K. Banerjee, and J. C. Lee: Appl. Phys. Lett. 92 (2008) 233508.
- (2008) Appl. Phys. Lett. , vol.92 , pp. 233508
- Zhao, H.¹ Shahrjerdi, D.² Zhu, F.³ Zhang, M.⁴ Kim, H.-S.⁵ Ok, I.⁶ Yum, J.H.⁷ Park, S.I.⁸ Banerjee, S.K.⁹ Lee, J.C.¹⁰

6
- 0038318522
- P. Legay, P. Petit, J. P. Debray, A. Kohl, G. Patriarche, G. L. Roux, M. Juhel, and M. Quillec: J. Appl. Phys. 81 (1997) 7600.
- (1997) J. Appl. Phys. , vol.81 , pp. 7600
- Legay, P.¹ Petit, P.² Debray, J.P.³ Kohl, A.⁴ Patriarche, G.⁵ Roux, G.L.⁶ Juhel, M.⁷ Quillec, M.⁸

7
- 77952523021
- W. Z. Jie, C. S. Jm, Z. Fan, Z. H. Liang, W. Weib, and W. R. Ha: ISLC, 1998, p. 157.
- (1998) ISLC , pp. 157
- Jie, W.Z.¹ Jm, C.S.² Fan, Z.³ Liang, Z.H.⁴ Weib, W.⁵ Ha, W.R.⁶

8
- 77952471922
- Z. Wang and S. Chua: IRPM, 2000, p. 419.
- (2000) IRPM , pp. 419
- Wang, Z.¹ Chua, S.²

9
- 19944423152
- N. C. Paul, K. Nakamura, H. Seto, K. Iiyama, and S. Takamiya: Jpn. J. Appl. Phys. 44 (2005) 1174.
- (2005) Jpn. J. Appl. Phys. , vol.44 , pp. 1174
- Paul, N.C.¹ Nakamura, K.² Seto, H.³ Iiyama, K.⁴ Takamiya, S.⁵

10
- 0007614726
- P. A. Grudowski, R. V. Chelakara, and R. D. Dupuis: Appl. Phys. Lett. 69 (1996) 388.
- (1996) Appl. Phys. Lett. , vol.69 , pp. 388
- Grudowski, P.A.¹ Chelakara, R.V.² Dupuis, R.D.³

11
- 0020797319
- J. R. Brews: Solid-State Electron. 26 (1983) 711.
- (1983) Solid-state Electron , vol.26 , pp. 711
- Brews, J.R.¹

12
- 0004277486
- Wiley, New York
- E. H. Nicollian and J. R. Brews: MOS Physics and Tecknology (Wiley, New York, 1982) p. 212.
- (1982) MOS Physics and Tecknology , pp. 212
- Nicollian, E.H.¹ Brews, J.R.²

13
- 0003514380
- Cambridge University Press, New York
- T. Taur and T. H. Ning: Fundamentals of Modern VLSI Devices (Cambridge University Press, New York, 1998) p. 85.
- (1998) Fundamentals of Modern VLSI Devices , pp. 85
- Taur, T.¹ Ning, T.H.²

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