Nonvolatile unipolar memristive switching mechanism of pulse laser ablated NiO films

2009 2nd International Workshop on Electron Devices and Semiconductor Technology, IEDST '09

Volumn , Issue , 2009, Pages

  Panda, Debashis ^a   Dhar, Achintya ^a   Ray, Samit K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Filamentary conduction; Nickel oxide; Nonvolatile memory; Resistive switching

Indexed keywords

AFM; CONDUCTING FILAMENT; FILAMENTARY CONDUCTION; FORMATION MECHANISM; GRAZING INCIDENCE; HIGH RESISTANCE; LOW-RESISTANCE STATE; NIO FILMS; NON-VOLATILE; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATION; POLYCRYSTALLINE; PULSE LASER; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; RMS ROUGHNESS; SMOOTH SURFACE; SWITCHING MECHANISM; SWITCHING PHENOMENON; UNIPOLAR SWITCHING; VERY LOW VOLTAGE; VOLTAGE BIAS; XRD STUDIES;

ELECTRON DEVICES; NICKEL ALLOYS; NICKEL OXIDE; PULSED LASER APPLICATIONS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SURFACE TOPOGRAPHY; SWITCHING SYSTEMS; X RAY DIFFRACTION;

SWITCHING;

EID: 77949892317     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDST.2009.5166114     Document Type: Conference Paper

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