Selective and anisotropic copper electroplating using copper overburden with an inhibiting additive

Electrochemical and Solid-State Letters

Volumn 13, Issue 5, 2010, Pages

  Haba, Toshio ^a   Suzuki, Hitoshi ^a   Yoshida, Hiroshi ^a   Akahoshi, Haruo ^a   Chinda, Akira ^b  

^a HITACHI LTD   (Japan)

^b HITACHI CABLE LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVE CONCENTRATIONS; COPPER ELECTROPLATING; COPPER STRUCTURES; ELECTROPLATING BATH; METALLIZATION PROCESS; RESIST LAYERS; TRIMETHYL;

ADDITIVES; CHLORINE COMPOUNDS;

COPPER;

EID: 77949730310     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3313111     Document Type: Article

References (19)

1. V. M. Dubin, Y. Shacham-Diamand, B. Zhoo, P. K. Vasudev, and C. H. Ting, J. Electrochem. Soc. 0013-4651, 144, 898 (1997). 10.1149/1.1837505
2. P. C. Hidber, P. F. Nealey, W. Helbig, and G. M. Whitesides, Langmuir 0743-7463, 12, 5209 (1996). 10.1021/la960238u
3. N. D. Sankir and R. O. Claus, J. Mater. Process. Technol. 0924-0136, 196, 155 (2008). 10.1016/j.jmatprotec.2007.05.031 (Pubitemid 350192187)
4. M. Geissler, H. Kind, P. Schmidt-Winkel, B. Michel, and E. Delamarche, Langmuir 0743-7463, 19, 6238 (2003).
5. T. R. Hendricks and I. Lee, Thin Solid Films 0040-6090, 515, 2347 (2006). 10.1016/j.tsf.2006.04.035
6. C. S. Lin, C. Y. Lee, J. H. Yang, and Y. S. Huang, Electrochem. Solid-State Lett. 1099-0062, 8, C125 (2005). 10.1149/1.1999911
7. A. M. T. van der Putten and J. W. G. de Bakker, J. Electrochem. Soc., 140, 2229 (1993). 10.1149/1.2220800
8. S. Zhang, J. De Baets, M. Vereeken, A. Vervaet, and A. Van Calster, J. Electrochem. Soc. 0013-4651, 146, 2870 (1999). 10.1149/1.1392022
9. J. Reid, Jpn. J. Appl. Phys., Part 1 0021-4922, 40, 2650 (2001). 10.1143/JJAP.40.2650
10. S. Soukane, S. Sen, and T. S. Cale, J. Electrochem. Soc. 0013-4651, 149, C74 (2002). 10.1149/1.1426401 (Pubitemid 34307130)
11. M. Hasegawa, Y. Negishi, T. Nakanishi, and T. Osaka, J. Electrochem. Soc. 0013-4651, 152, C221 (2005). 10.1149/1.1867672
12. S. -K. Kim, D. Josell, and T. P. Moffat, J. Electrochem. Soc. 0013-4651, 153, C826 (2006). 10.1149/1.2354456
13. T. P. Moffat, D. Wheeler, S. -K. Kim, and D. Josell, Electrochim. Acta 0013-4686, 53, 145 (2007). 10.1016/j.electacta.2007.03.025 (Pubitemid 47391474)
14. Y. H. Im, M. O. Bloomfield, S. Sen, and T. S. Cale, Electrochem. Solid-State Lett. 1099-0062, 6, C42 (2003). 10.1149/1.1541256
15. P. C. Andricacos, C. Uzoh, J. O. Dukovic, J. Horkans, and H. Deligianni, IBM J. Res. Dev. 0018-8646, 42, 567 (1998).
16. M. Hayase, M. Taketani, T. Hatsukawa, and K. Hayabusa, Electrochem. Solid-State Lett. 1099-0062, 6, C92 (2003). 10.1149/1.1568832
17. R. Akolkar and V. Dubin, Electrochem. Solid-State Lett. 1099-0062, 10, D55 (2007). 10.1149/1.2717364 (Pubitemid 46550188)
18. T. Haba, T. Itabashi, H. Akahoshi, and H. Miyazaki, in Advanced Metallization Conference 2002, B. M. Melnick, T. S. Cale, S. Zaima, and, T. Ohta, Editors, Materials Research Society, p. 361 (2003).
19. M. Lefebvre, G. Allardyce, M. Seita, H. Tsuchida, M. Kusaka, and S. Hayashi, Circuit World 0305-6120, 29, 9 (2003). 10.1108/03056120310454943