MOVPE growth and properties of non-polar InGaN/GaN multiple quantum wells on γ-LiAlO2 substrates

Journal of Crystal Growth

Volumn 312, Issue 8, 2010, Pages 1329-1333

  Hang, D R ^a   Chou, Mitch M C ^a   Mauder, C ^b   Heuken, M ^b,c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c AIXTRON AG   (Germany)

Author keywords

A1. Characterization; A3. MOVPE; A3. Quantum wells; B1. Nitrides

Indexed keywords

A3. QUANTUM WELLS; B1. NITRIDES; IN-PLANE STRAINS; INGAN BUFFER LAYER; INGAN/GAN; INGAN/GAN MQWS; M-PLANE; METAL-ORGANIC VAPOR PHASE EPITAXY; MG-DOPED; MOVPE; MOVPE GROWTH; MULTIPLE QUANTUM WELLS; NON-POLAR; OPTICAL POLARIZATION; POLARIZATION ANISOTROPY; POLARIZED EMISSIONS; POLARIZED LIGHT; QUANTUM WELL; STRUCTURAL AND OPTICAL PROPERTIES;

ANISOTROPY; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; LIGHT; LIGHT POLARIZATION; LITHIUM ALLOYS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; OPTICAL PROPERTIES; POLARIZATION; SUBSTRATES; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77949628363     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.10.045     Document Type: Article

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