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Volumn 311, Issue 10, 2009, Pages 2910-2913

Fabrication of freestanding m-plane GaN wafer by using the HVPE technique on an aluminum carbide buffer layer on an m-plane sapphire substrate

(5) Sasaki, Hitoshi a Sunakawa, Haruo a Sumi, Norihiko a Yamamoto, Kazutomi a Usui, Akira a

a FURUKAWA CO LTD (Japan)

Author keywords

A1. Substrates; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

A-DENSITY; A1. SUBSTRATES; A3. HYDRIDE VAPOR-PHASE EPITAXY; ALUMINUM CARBIDE; B1. NITRIDES; B2. SEMICONDUCTING III-V MATERIALS; BASAL PLANE STACKING FAULTS; CRYSTALLINITY; FIGURE MEASUREMENT; GAN LAYERS; HYDRIDE VAPOR PHASE EPITAXY; M-PLANE; SAPPHIRE SUBSTRATES; SCATTERING VECTORS; STRUCTURAL DEFECT; TEM; X RAY ROCKING CURVE;

ALUMINA; ALUMINUM; BUFFER LAYERS; CARBIDES; CORUNDUM; CRYSTAL GROWTH; GALLIUM NITRIDE; SAPPHIRE; SEMICONDUCTING GALLIUM; STACKING FAULTS; SUBSTRATES; SULFUR COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

GALLIUM ALLOYS;

EID: 65749102638 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2009.01.094 Document Type: Article

Times cited : (14)

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