Self-assembled c-plane GaN nanopillars on γ-LiAlO2 substrate grown by plasma-assisted molecular-beam epitaxy

Japanese Journal of Applied Physics

Volumn 47, Issue 2 PART 1, 2008, Pages 891-895

  Hsieh, Chia Ho ^a   Lo, Ikai ^a   Gau, Ming Hong ^a   Chen, Yen Liang ^a   Chou, Ming Chi ^a   Pang, Wen Yuan ^a   Chang, Yao I ^a   Hsu, Yu Chi ^a   Sham, Meng Wei ^a   Chiang, Jih Chen ^a   Tsai, Jenn Kai ^b  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

Author keywords

GaN nanopillars; LiAlO2; MBE; Spin polarized FET

Indexed keywords

CRYSTAL GROWTH; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; LITHIUM ALLOYS; MICROSCOPIC EXAMINATION; MOLECULAR BEAMS; PLASMAS; SEMICONDUCTING GALLIUM; THREE DIMENSIONAL;

ANIONIC BASES; BASAL PLANES; DISLOCATION DEFECTS; GAN FILMS; GAN NANOPILLARS; HEXAGONAL; LIALO2; M-PLANE; MBE; MOLECULAR-BEAM EPITAXIES; NANOPILLARS; SIMULTANEOUS GROWTHS; SPIN-POLARIZED FET; TRANSMISSION ELECTRONS;

SUBSTRATES;

EID: 44349142169     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.891     Document Type: Article

References (19)

1. S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku: Appl. Phys. Lett. 70 (1997) 1417.
2. Y.-F. Wu, B. P. Keller, S. Keller, D. Kapolnek, P. Kozodoy, S. P. DenBaars, and U. K. Mishra: Appl. Phys. Lett. 69 (1996) 1438.
3. I. Lo, W. T. Wang, M. H. Gau, J. K. Tsai, S. F. Tsay, and J. C. Chiang: Appl. Phys. Lett. 88 (2006) 082108.
4. I. Lo, J. K. Tsai, W. J. Yao, P. C. Ho, L. W. Tu, T. C. Chang, S. Elhanri, W. C. Mitchel, K. Y. Hsieh, J. H. Huang, H. L. Huang, and W. C. Tsai: Phys. Rev. B 65 (2002) 161306.
5. K. S. Cho, T.-Y. Huang, H.-S. Wang, M.-G. Lin, T.-M. Chen, C.-T. Liang, Y. F. Chen, and I. Lo: Appl. Phys. Lett. 86 (2005) 222102.
6. J. A. Garrido, J. L. Sanchez-Rojas, A. Jimenez, E. Munoz, F. Omnes, and P. Gibart: Appl. Phys. Lett. 75 (1999) 2407.
7. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog: Nature (London) 406 (2000) 865.
8. C. Rivera, J. L. Pau, E. Munoz, P. Misra, O. Brandt, H. T. Grahn, and K. H. Ploog: Appl. Phys. Lett. 88 (2006) 213507.
9. P. Misra, Y. J. Sun, O. Brandt, and H. T. Grahn: Appl. Phys. Lett. 83 (2003) 4327.
10. C. N. Chen, S. H. Chang, M. L. Hung, J.-C. Chiang, I. Lo, W. T. Wang, M. H. Gau, H. F. Kao, and M. E. Lee: J. Appl. Phys. 101 (2007) 043104.
11. S. Datta and B. Das: Appl. Phys. Leu. 56 (1990) 665.
12. D. D. Awschalom, D. Loss, and N. Samarth: Semiconductor Spintronics and Quantum Computation (Springer-Verlag, Berlin, 2002).
13. S. J. Beckerman, R. B. Ford, and M. T. Nemeth: Powder Diffr. 11 (1996) 312.
14. L. W. Tu, C. L. Hsiao, T. W. Chi, I. Lo, and K. Y. Hsieh: Appl. Phys. Lett. 82 (2003) 1601.
15. J. K. Tsai, I. Lo, K.-L. Chuang, L. W. Tu, J. H. Huang, C. H. Hsieh, and K.-Y. Hsieh: J. Appl. Phys. 95 (2004) 460.
16. Y. J. Sun, 0. Brandt, and K. H. Ploog: J. Vac. Sci. Technol. B 21 (2003) 1350.
17. K. Georgsson, N. Carlsson, L. Samuelson, W. Seifert, and L. R. Wallenberg: Appl. Phys. Lett. 67 (1995) 2981.
18. S. Chattopadhyay, K. H. Chen, S. C. Shi, C. T. Wu, C. H. Chen, and L. C. Chen: Appl. Phys. Lett. 89 (2006) 143105.
19. I. Lo, K. Y. Hsieh, S. L. Hwang, L.-W. Tu, W. C. Mitchel, and A. W. Saxler: Appl. Phys. Lett. 74 (1999) 2167.