Growth and characterization of m-plane GaN-based layers on LiAlO2 (1 0 0) grown by MOVPE

Journal of Crystal Growth

Volumn 311, Issue 3, 2009, Pages 452-455

  Hang, D R ^a   Chou, Mitch M C ^a   Chang, Liuwen ^a   Dikme, Y ^b   Heuken, M ^b,c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b AIXTRON AG   (Germany)

^c RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

A1. Characterization; A1. High resolution XRD; A3. MOVPE; A3. Quantum wells; B1. Nitrides

Indexed keywords

ANISOTROPY; CRYSTAL GROWTH; ELECTRIC FIELDS; GALLIUM NITRIDE; GROWTH (MATERIALS); LIGHT; LIGHT EMISSION; LITHIUM ALLOYS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; ORGANOMETALLICS; POLARIZATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES; WELLS; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

A1. CHARACTERIZATION; A1. HIGH RESOLUTION XRD; A3. MOVPE; A3. QUANTUM WELLS; B1. NITRIDES;

GALLIUM ALLOYS;

EID: 59749106247     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.029     Document Type: Article

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