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Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2161-2165

Growth studies of GaN and alloys on LiAlO2 by MOVPE

(8) Dikme, Y a Van Gemmern, P a Chai, B b Hill, D b Szymakowski, A a Kalisch, H a Heuken, M a,c Jansen, R H a

a RWTH AACHEN UNIVERSITY (Germany)

b Crystal Photonics Inc Sanford (United States)

c AIXTRON AG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; LIGHT POLARIZATION; LITHIUM COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; OPTOELECTRONIC DEVICES; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

GAN-BASED STRUCTURES; NON-POLAR MATERIALS; SPONTANEOUS POLARIZATIONS; WURTZITE;

GROWTH KINETICS;

EID: 27444437493 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200461414 Document Type: Conference Paper

Times cited : (23)

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