Growth behavior of nonpolar GaN on the nearly lattice-matched (1 0 0) γ-LiAlO2 substrate by chemical vapor deposition

Journal of Crystal Growth

Volumn 311, Issue 3, 2009, Pages 448-451

  Chou, Mitch M C ^a   Chang, Liuwen ^a   Chen, Chenlong ^a   Yang, Wen Fu ^a   Li, Chu An ^a   Wu, Jih Jen ^b  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

A2. Czochralski method; A3. Chemical vapor deposition; B1. GaN

Indexed keywords

DIFFRACTION; EMISSION SPECTROSCOPY; EPITAXIAL FILMS; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; GROWTH (MATERIALS); HOLOGRAPHIC INTERFEROMETRY; LITHIUM ALLOYS; NITRIDES; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM; SINGLE CRYSTALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

A2. CZOCHRALSKI METHOD; A3. CHEMICAL VAPOR DEPOSITION; B1. GAN; CZOCHRALSKI; DEPOSITION TIME; GAN EPILAYERS; GAN FILMS; GROWTH BEHAVIORS; GROWTH CHARACTERISTICS; LATTICE-MATCHED; NEAR-BAND EDGE EMISSIONS; NON-POLAR; PHOTOLUMINESCENCE SPECTRUM; RMS ROUGHNESS; SINGLE-CRYSTAL SUBSTRATES; TEM; TRANSMISSION ELECTRONS; X-RAY DIFFRACTION PATTERNS; YELLOW BANDS;

CHEMICAL VAPOR DEPOSITION;

EID: 59749084495     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.053     Document Type: Article

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