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Journal of the Korean Physical Society

Volumn 50, Issue 3, 2007, Pages 797-800

Influence of an advanced buffer layer on the optical properties of an InGaN/GaN MQW grown on a (111) silicon substrate

(4) Hang, D R a Chou, M M C a Hsieh, M H b Heuken, M c

a NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

c AIXTRON AG (Germany)

Author keywords

GaN; InGaN; Quantum well

Indexed keywords

EID: 34147184225 PISSN: 03744884 EISSN: None Source Type: Journal
DOI: 10.3938/jkps.50.797 Document Type: Article

Times cited : (11)

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