Mechanism of residue formation in silicon trench etching using a bromine-based plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 1, 1998, Pages 5-9

  Hayakawa, Tetsuo ^a,b   Suzuki, Takashi ^a   Uesugi, Tsutomu ^a   Mitsushima, Yasuichi ^a  

^a Rd Management Section   (Japan)

^b Nanotech Laboratory   (Japan)

Author keywords

Etching; HBr; Oxygen precipitation; Plasma; Reactive ion etching; Residue; Silicon; Silicon needle; Trench

Indexed keywords

NUCLEATION; OPTICAL MICROSCOPY; OXIDATION; OXYGEN; PLASMA ETCHING; PRECIPITATION (CHEMICAL); REACTION KINETICS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MODELS; SILICA;

SILICON TRENCH ETCHING;

SILICON WAFERS;

EID: 0031695002     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.37.5     Document Type: Article

References (19)

1. D. Ueda, H. Takagi, A. Shimano and G. Kano: Ext. Abstr. 16th Conf. Solid State Devices and Materials, Tokyo, 1984 (Business Center for Academic Societies, Tokyo, 1984) p. 313.
2. K. Kurosawa, T. Shibata and H. Iizuka: Tech. Dig. 1981 IEDM (1981) p. 384.
3. H. Sunami, T. Kure, N.Hashimoto, K. Itoh, T. Toyabe and S. Asai: IEEE Electron Device Lett. 4 (1983) 90.
4. G. S. Oehrlein, K. K. Chan, M. A. Jaso and G. W. Rubloff: J. Vac. Sci. & Technol. A 7 (1989) 1030.
5. M. Sato and Y. Arita: J. Electrochem. Soc. 134 (1987) 2856.
6. T. D. Bestwick and G. S. Oehrlein: J. Vac. Sci. & Technol. A 8 (1990) 1696.
7. I. W. Rangelow, P. Thoren, K. Masseli and R. Kassing: Microelectron. Eng. 5 (1986) 387.
8. G. S. Oehrlein, R. G. Schad and M. A. Jaso: Surf. Interf. Anal. 8 (1986) 243.
9. G.K. Herb, D. J. Rieger and K. Shields: Solid State Technol. 30 (1987) 109.
10. T. P. Chow, P. A. Maciel and G. M. Fanelli: J. Electrochem. Soc. 134 (1987) 1281.
11. D. J. Thomas, P. Southworth, M. C. Flowers and R. Greef: J. Vac. Sci. & Technol. B 7 (1989) 1325.
12. G. S. Oehrlein, J. F. Rembestski and E. H. Payne: J. Vac. Sci. & Technol. B 8 (1990) 1199.
13. J. Gass, H. H. Müller, H. Stüssi and S. Schweitzer: J. Appl. Phys. 51 (1980) 2030.
14. A. Borghesi, B. Pivac, A. Sassella and A. Stella: J. Appl. Phys. 77 (1995) 4169.
15. M. Wright Jenkis: J. Electrochem. Soc. 124 (1977) 757.
16. D. Huber, P. Stallhofer and M. Blätte: Semiconductor Silicon 1981 (Electrochemical Society, 1981) p. 756.
17. F. Shimura and H. Tsuya: J. Electrochem. Soc. 129 (1982) 1062.
18. H. Abe, I. Suzuki and H. Koya: J. Electrochem. Soc. 144 (1997) 306.
19. D. Heck, R. E. Tressler and J. Monkowski: J. Appl. Phys. 54 (1983) 5739.