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Volumn 26, Issue 1, 2008, Pages 298-304
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Characterization of an ultrashallow junction structure using angle resolved x-ray photoelectron spectroscopy and medium energy ion scattering
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Author keywords
[No Author keywords available]
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Indexed keywords
ANGLE RESOLVED X-RAY PHOTOELECTRON SPECTROSCOPY (AR-XPS);
CHEMICAL BONDING;
STATE DEPTH INFORMATION;
ULTRASHALLOW JUNCTIONS;
COMPUTER SIMULATION;
ION IMPLANTATION;
MOSFET DEVICES;
SECONDARY ION MASS SPECTROMETRY;
SHEET RESISTANCE;
X RAY PHOTOELECTRON SPECTROSCOPY;
SEMICONDUCTOR JUNCTIONS;
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EID: 38849194824
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.2834689 Document Type: Article |
Times cited : (5)
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References (16)
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