Characterizing SIMS transient effects apparent in matrix secondary ion signals from silicon under 1 keV Cs + impact

Applied Surface Science

Volumn 252, Issue 19, 2006, Pages 6456-6458

  van der Heide, P A W ^a  

^a University of Houston   (United States)

Author keywords

Secondary ion emission; Silicon; Transient effects

Indexed keywords

ELECTRON TUNNELING; SEMICONDUCTING SILICON; SENSITIVITY ANALYSIS; SURFACE PHENOMENA; WSI CIRCUITS;

MATRIX SECONDARY ION SIGNALS; SECONDARY ION EMISSION; TRANSIENT EFFECTS;

SECONDARY ION MASS SPECTROMETRY;

EID: 33747204619     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.02.074     Document Type: Article

References (5)

1. Yu M.L. In: Behrisch R., and Wittmaack K. (Eds). Sputtering by Particle Bombardment. Part III (1991), Springer-Verlag, Berlin 91
2. van der Heide P.A.W., Lim M.S., Perry S.S., and Rabalais J.W. J. Chem. Phys. 113 (2000) 10344
3. van der Heide P.A.W. Surf. Sci. 555 (2004) 193
4. van der Heide P.A.W., Lim M.S., Perry S.S., and Bennett J. Nucl. Instrum. Meth. Phys. Res. B 201 (2003) 413
5. Mitchell D.F., Clark K.B., Bardewell J.A., Lennard W.N., Massaumi G.R., and Mitchell I.V. Surf. Interface Anal. 21 (1994) 323