Ultrashallow depth profiling using SIMS and ion scattering spectroscopy

Surface and Interface Analysis

Volumn 39, Issue 10, 2007, Pages 826-831

  Kataoka, Y ^a   Itani, T ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Arsenic; Gate dielectrics; RBS; Shallow junction; SIMS

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEPTH PROFILING; MATHEMATICAL MODELS; PROCESS CONTROL; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; TRANSIENT ANALYSIS;

ION SCATTERING SPECTROSCOPY; SHALLOW JUNCTIONS; STACKED LAYERS;

GATE DIELECTRICS;

EID: 35348975493     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2597     Document Type: Article

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