High depth resolution characterization of the damage and annealing behaviour of ultra shallow As implants in Si

Proceedings of the International Conference on Ion Implantation Technology

Volumn 22-27-September-2002, Issue , 2002, Pages 597-600

  Van Den Berg, J A ^a   Armour, D G ^a   Werner, M ^a   Whelan, S ^a   Vandervorst, W ^b   Clarysse, T ^b   Collart, E H J ^c   Goldberg, R D ^c   Bailey, P ^d   Noakes, T C Q ^d  

^a UNIVERSITY OF SALFORD   (United Kingdom)

^b IMEC   (Belgium)

^c Applied Materials   (United Kingdom)

^d DARESBURY LABORATORY   (United Kingdom)

Author keywords

component; dopant segregation; MEIS; SIMS, SPE; ULE As implant and damage profiling

Indexed keywords

ANNEALING; ION BEAM LITHOGRAPHY; ION IMPLANTATION; MASS SPECTROMETRY; SECONDARY ION MASS SPECTROMETRY; SILICON;

AMORPHOUS/CRYSTALLINE INTERFACE; ANNEAL TEMPERATURES; COMPONENT; DAMAGE PROFILING; DOPANT SEGREGATION; ENERGY DEPOSITIONS; MEDIUM ENERGY ION SCATTERING; MEIS;

IONS;

EID: 84961367314     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IIT.2002.1258076     Document Type: Conference Paper

References (6)

1. J. A. van den Berg et al, "Medium energy ion scattering for the characterisation of damage profiles of ultra shallow B implants in Si," Nucl. Instrum. Methods B 183, 2001, pp 154-165.
2. J. A. van den Berg et al, "Characterisation by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperature," J Vac. Sci. Technol. B 20, 2002, pp. 974-983.
3. J. S. Williams, "Solid phase recrystallization processes in silicon," in Surface modification and alloying by laser, ion and electron beams, J. M. Poate, G. Foti and D. C. Jacobson, Eds. Plenum, 1983, pp. 133-163.
4. R. Kasnavi et al., "Characterisation of arsenic dose loss at the Si/SiO2 interface," J. Appl. Phys. 87, 2000, pp.2255-2260.
5. J. Dabrowski, H.-J. Mussig, V. Zavodinsky, R. Baierleand M. J. Caldas " Mechanism of dopant segregation to SiO2/Si(001) interfaces," Phys. Rev. B. 65, 2002, p. 24535-1
6. P. M. Rousseau, P. B. Griffin, W. T. Fang and J D Plummer, " Arsenic deactivation enhanced diffusion: a time, temperature and concentration study," J. Appl. Phys. 84, 1998. pp. 3593-3601 and references therein.