Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants

Applied Surface Science

Volumn 252, Issue 19, 2006, Pages 7214-7217

  Giubertoni, D ^a   Bersani, M ^a   Barozzi, M ^a   Pederzoli, S ^a   Iacob, E ^a   van den Berg, J A ^b   Werner, M ^b  

^a ITC IRST   (Italy)

^b UNIVERSITY OF SALFORD   (United Kingdom)

Author keywords

Arsenic; MEIS; SIMS; Ultra shallow junctions

Indexed keywords

ANNEALING; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SILICA; SILICON; SURFACE CHEMISTRY;

MEIS; SPUTTERING RATE; ULTRA SHALLOW JUNCTIONS;

ARSENIC;

EID: 33747201398     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.02.137     Document Type: Article

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