Photoelectrical characterization of Schottky junctions between poly(4h-cyclopenta[2,1-b:3,4-b′]dithiophene) and aluminum: effect of hexadecyl groups in 4 position

Thin Solid Films

Volumn 366, Issue 1-2, 2000, Pages 211-215

  Camaioni, N ^a   Casalbore Miceli, G ^a   Beggiato, G ^a   Cristani, M ^a   Summonte, C ^a  

^a CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ELECTRIC PROPERTIES; MOLECULAR STRUCTURE; PHOTOELECTRICITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SYNTHESIS (CHEMICAL); TRANSPORT PROPERTIES;

POLYCYCLOPENTAL DITHIOPENE; SCHOTTKY JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 0034188362     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)01103-7     Document Type: Article

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