Ti/p-Si Schottky barrier diodes with interfacial layer prepared by thermal oxidation

Physica B: Condensed Matter

Volumn 364, Issue 1-4, 2005, Pages 133-141

  Cetin H ^a   Sahin B ^a   Ayyildiz, E ^a   Turut A ^b  

^a ERCIYES UNIVERSITY   (Turkey)

^b ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Metal insulator semiconductor structures; Nonuniformity; Oxidation; Schottky barriers; Surface and interface electron states; Tunneling

Indexed keywords

ELECTRIC INSULATORS; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; EVAPORATION; FERMI LEVEL; HEAT TREATMENT; OXIDATION; SEMICONDUCTOR MATERIALS; SURFACE CHEMISTRY; TITANIUM COMPOUNDS; ULSI CIRCUITS;

METAL-INSULATOR-SEMICONDUCTOR STRUCTURES; NONUNIFORMITY; SURFACE AND INTERFACE ELECTRON STATES; TUNNELING;

SCHOTTKY BARRIER DIODES;

EID: 20344402049     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.04.001     Document Type: Article

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