Growth and characterization of nitrogen-doped polycrystalline 3C-SiC thin films for harsh environment MEMS applications

Journal of Micromechanics and Microengineering

Volumn 20, Issue 3, 2010, Pages

  Liu, Fang ^a,b,c   Carraro, Carlo ^a,c   Pisano, Albert P ^a,c   Maboudian, Roya ^a,c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Manufacturing Technology of China Educational Ministry   (China)

^c Systemwide Toxic Substances Research and Teaching Program   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL MODULUS; CRYSTALLINITIES; DICHLOROSILANES; ELECTRICAL AND MECHANICAL PROPERTIES; HARSH ENVIRONMENT; IN-SITU; MATERIAL PROPERTY; MEMS APPLICATIONS; METHYLSILANES; NITROGEN-DOPED; POLYCRYSTALLINE 3C-SIC; SI(1 0 0); STRAIN GRADIENTS;

ELECTRIC PROPERTIES; MECHANICAL PROPERTIES; MEMS; MICROELECTROMECHANICAL DEVICES; RESIDUAL STRESSES; SILICON CARBIDE; SILICON WAFERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77749340802     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/20/3/035011     Document Type: Article

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