Silicon carbide thin films using 1,3-disilabutane single precursor for MEMS applications-A review

ECS Transactions

Volumn 3, Issue 10, 2006, Pages 267-280

  Roper, Christopher S ^a   Carraro, Carlo ^a   Howe, Roger T ^b   Maboudian, Roya ^a  

^a University of California   (United States)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BUTANE; CHEMICAL VAPOR DEPOSITION; MICROELECTROMECHANICAL DEVICES; POLYCRYSTALLINE MATERIALS; PRESSURE EFFECTS; SILICA; SILICON CARBIDE;

ANTI-STICTION PROPERTIES; LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); PLASMA ETCH CHEMISTRIES;

THIN FILMS;

EID: 33847008682     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2357267     Document Type: Conference Paper

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