Mechanical properties of thin silicon films deposited at low temperatures by PECVD

Journal of Micromechanics and Microengineering

Volumn 20, Issue 3, 2010, Pages

  Gaspar, J ^a   Paul, O ^a   Chu, V ^b   Conde, J P ^b,c  

^a UNIVERSITY OF FREIBURG   (Germany)

^b INESC   (Portugal)

^c INSTITUTO SUPERIOR TÉCNICO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS AND NANOCRYSTALLINE SILICON; BI-LAYER; COMPREHENSIVE STUDIES; DEPOSITION CONDITIONS; FAILURE STRESS; FRACTURE PROPERTY; HYDROGEN DILUTION; LOAD-DEFLECTION RESPONSE; LOW TEMPERATURES; MEMBRANE FAILURE; PLANE-STRAIN; SILICON FILMS; SILICON THIN FILM; STRONG CONTRAST; SUBSTRATE TEMPERATURE; THIN SILICON FILMS;

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; DEPOSITION; HYDROGENATION; MECHANICAL PROPERTIES; METALLIC FILMS; NANOCRYSTALLINE SILICON; PLASMA DEPOSITION; RESIDUAL STRESSES; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; THIN FILMS;

AMORPHOUS SILICON;

EID: 77749311363     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/20/3/035022     Document Type: Article

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