Effect of film thickness on hydrogenated amorphous silicon grown with hydrogen diluted silane

Applied Physics Letters

Volumn 80, Issue 14, 2002, Pages 2463-2465

  Danesh, P ^a   Pantchev, B ^a   Grambole, D ^b   Schmidt, B ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DENSE STRUCTURES; EXTENSIVE VOIDS; FILM DENSITY; GLASS SUBSTRATES; HYDROGEN CONCENTRATION; HYDROGEN DILUTED SILANE; HYDROGENATED AMORPHOUS SILICON (A-SI:H); MECHANICAL STRESS; NUCLEAR REACTION ANALYSIS; STRUCTURAL IMPROVEMENTS; SUBSTRATE TEMPERATURE; VOID NETWORKS;

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; DEPOSITION; FILM PREPARATION; HYDROGEN; HYDROGENATION; ION EXCHANGE; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; STRESSES; SUBSTRATES;

AMORPHOUS SILICON;

EID: 79955995009     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1467705     Document Type: Article

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