Fracture properties of LPCVD silicon nitride and thermally grown silicon oxide thin films from the load-deflection of long Si3 N4 and SiO2/Si3N4 diaphragms

Journal of Microelectromechanical Systems

Volumn 17, Issue 5, 2008, Pages 1120-1134

  Yang, Jinling ^a,b,c   Gaspar, João ^a   Paul, Oliver ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c STATE KEY LABORATORY OF TRANSDUCER TECHNOLOGY   (China)

Author keywords

Bulge test; Fracture; Pooled Weibull analysis; Silicon nitride (Si3N4; Silicon oxide (SiO2)

Indexed keywords

AMORPHOUS FILMS; BRITTLENESS; COMPOSITE FILMS; DIAPHRAGMS; FRACTURE; NITRIDES; NONMETALS; OXIDES; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON; SILICON COMPOUNDS; SILICON NITRIDE; STRESS CONCENTRATION; THICK FILMS; THIN FILMS;

BULGE TEST; POOLED WEIBULL ANALYSIS; SILICON NITRIDE (SI3N4; SILICON OXIDE (SIO2);

OXIDE FILMS;

EID: 53649090474     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2008.928706     Document Type: Article

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