High mobility nanocrystalline silicon transistors on clear plastic substrates

IEEE Electron Device Letters

Volumn 27, Issue 1, 2006, Pages 49-51

  Kattamis, Alex Z ^a   Holmes, Russell J ^a   Cheng, I Chun ^a   Long, Ke ^a   Sturm, James C ^a   Forrest, Stephen R ^a   Wagner, Sigurd ^a  

^a Princeton University ^*  (United States)

Author keywords

Clear plastic (CP) foil; Electrophosphorescence; Flexible substrate; Nanocrystalline silicon (nc Si); Organic light emitting device (OLED); Thin film transistor (TFT)

Indexed keywords

ELECTRON MOBILITY; GATES (TRANSISTOR); LIGHT EMITTING DIODES; LOW TEMPERATURE OPERATIONS; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; THERMAL EFFECTS; TRANSCONDUCTANCE;

CLEAR PLASTIC (CP) FOIL; ELECTROPHOSPHORESCENCE; FLEXIBLE SUBSTRATE; NANOCRYSTALLINE SILICON; ORGANIC LIGHT EMITTING DEVICE (OLED);

THIN FILM TRANSISTORS;

EID: 33645527241     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.861256     Document Type: Article

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