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Applied Physics Letters

Volumn 84, Issue 9, 2004, Pages 1591-1593

AlGaN/GaN polarization-doped field-effect transistor for microwave power applications

(5) Rajan, Siddharth a Xing, Huili a DenBaars, Steve a Mishra, Umesh K a Jena, Debdeep b

a University of California (United States)

b University of Notre Dame (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL CHARGE; OSCILLATION FREQUENCY;

ANNEALING; CURRENT DENSITY; DOPING (ADDITIVES); ELECTRON GAS; FREQUENCIES; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; IMPURITIES; MICROWAVES; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSCONDUCTANCE;

MESFET DEVICES;

EID: 1642604020 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1652254 Document Type: Article

Times cited : (95)

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