High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia

Applied Physics Letters

Volumn 75, Issue 4, 1999, Pages 484-486

  Nikishin, S A ^a   Antipov, V G ^a   Francoeur, S ^a   Faleev, N N ^a   Seryogin, G A ^a   Elyukhin, V A ^a   Temkin, H ^a   Prokofyeva, T I ^b   Holtz, M ^b   Konkar, A ^c   Zollner, S ^c  

^a Department of Electrical and Computer Engineering   (United States)

^b TEXAS TECH UNIVERSITY   (United States)

^c MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; FILM GROWTH; HIGH TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS; SURFACE STRUCTURE; X RAY ANALYSIS;

ALUMINUM NITRIDE; GAS-SOURCE MOLECULAR BEAM EPITAXY (GSMBE); SURFACE RECONSTRUCTION; X RAY REFLECTIVITY ANALYSIS;

SEMICONDUCTING FILMS;

EID: 0032614509     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124423     Document Type: Article

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