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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1777-1779

V-defect analysis in green and deep green light emitting diode structures

(10) Zhu, M a Detchprohm, T a You, S a Wang, Y a Xia, Y a Zhao, W a Li, Y a Senawiratne, J a Zhang, Z a Wetzel, C a

a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; C-PLANE SAPPHIRE; GREEN LEDS; GREEN LIGHT EMITTING DIODES; HIGH DENSITY; PHOTOLUMINESCENCE PERFORMANCE; QUANTUM WELL; STRUCTURAL MORPHOLOGY; V-DEFECTS;

DEFECTS; EDGE DISLOCATIONS; LIGHT EMITTING DIODES; NITRIDES; PHYSICAL OPTICS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR GROWTH;

EID: 65749095524 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200778635 Document Type: Conference Paper

Times cited : (10)

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- Improved Performance of GaInN Based Deep Green Light Emitting Diodes through V-Defect Reduction
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- T. Detchprohm, M. Zhu, W. Zhao, Y. Xia, Y. Li, J. Senawiratne, and C. Wetzel, Improved Performance of GaInN Based Deep Green Light Emitting Diodes through V-Defect Reduction, to be presented in the 7th Internat. Conf. on Nitride Semiconductor, September 16-21, 2007, Las Vegas, USA.
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