Excitation dependent photoluminescence measurements of the nonradiative lifetime and quantum efficiency in GaAs

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 3, 2007, Pages 1077-1082

  Johnson, S R ^a,b   Ding, D ^c   Wang, J B ^c   Yu, S Q ^c   Zhang, Y H ^c  

^a ARIZONA STATE UNIVERSITY   (United States)

^b Arizona State University   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

INJECTION LEVEL; NONRADIATIVE LIFETIME; PHOTOLUMINESCENCE MEASUREMENTS;

EXCITATION ENERGY; LIGHT MEASUREMENT; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SPONTANEOUS EMISSION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 34249891048     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2720864     Document Type: Article

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