Soft UV-NIL at 20 nm scale using flexible bi-layer stamp casted on HSQ master mold

Microelectronic Engineering

Volumn 87, Issue 5-8, 2010, Pages 1015-1018

  Cattoni, Andrea ^a   Cambril, E ^a   Decanini, D ^a   Faini, G ^a   Haghiri Gosnet, A M ^a  

^a CNRS   (France)

Author keywords

Hydrogen silsesquioxane; Nanoimprint; Soft UV NIL

Indexed keywords

BI-LAYER; COMPARATIVE STUDIES; E-BEAM LITHOGRAPHY; HIGH DENSITY; HIGH UNIFORMITY; HYDROGEN SILSESQUIOXANE; MASTER MOLDS; NANO-IMPRINT; NANODOTS; NANOIMPRINTING LITHOGRAPHY; PATTERNING PROCESS; SIDEWALL ROUGHNESS; ULTRAHIGH RESOLUTION;

ELECTRON BEAM LITHOGRAPHY; MOLDS;

NANOIMPRINT LITHOGRAPHY;

EID: 76949098029     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.11.106     Document Type: Article

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