10 nm lines and spaces written in HSQ, using electron beam lithography

Microelectronic Engineering

Volumn 84, Issue 5-8, 2007, Pages 822-824

  Grigorescu, A E ^a   van der Krogt, M C ^b   Hagen, C W ^a   Kruit, P ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Electron beam resist; High resolution; HSQ; Nanolithography

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; NANOLITHOGRAPHY; POTASSIUM HYDROXIDE; SILICONES;

ELECTRON BEAM RESIST; HYDROGEN SILSESQUIOXANE (HSQ);

PHOTORESISTS;

ELECTRON BEAMS; LITHOGRAPHY; POLYSILICONES; POTASSIUM HYDROXIDE;

EID: 34247584095     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.01.022     Document Type: Article

References (10)

1. Yoshiiwa M., Kageyama H., Shirota Y., Wakaya F., Gamo K., and Takai M. Appl. Phys. Lett. 69 (1996) 2605
2. Fujita J., Ohnishi Y., Ochiai Y., and Matsui S. Appl. Phys. Lett. 68 (1996) 1297
3. Fujita J., Watanabe H., Ochiai Y., Manako S., Tsai J.S., and Matsui S. Appl. Phys. Lett. 66 (1995) 3064
4. Tada T., and Kanayama T. Jpn. J. Appl. Phys. 35 (1996) L63
5. Hu W., Sarverswaran K., Lieberman M., and Bernstein G.H. J. Vac. Sci. Technol. B 22 (2004) 1711
6. Yasin S., Hasko D.G., and Ahmed H. Appl. Phys. Lett. 78 (2001) 2760
7. Namatsu H., Takahashi Y., Yamazaki K., Nagase M., and Kurihara K. J. Vac. Sci. Technol. B 16 (1998) 69
8. Namatsu H., Yamaguchi T., Nagase M., Yamazaki, and Kurihara K. Microelectron. Eng. 41/42 (1998) 331
9. Word M.J., Adesida I., and Berger P.R. J. Vac. Sci. Technol. B 21 (2003) L12
10. Henschel W., Georgiev Y.M., and Kurz H. J. Vac. Sci. Technol. B 21 (2003) 2018