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Journal of Applied Physics

Volumn 107, Issue 3, 2010, Pages

Light polarization characteristics of m -plane Alx Ga 1-x N films suffering from in-plane anisotropic tensile stresses

(5) Hazu, K a Hoshi, T a Kagaya, M a Onuma, T a Chichibu, S F a

a TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ANISOTROPIC STRESS; ELECTRIC FIELD COMPONENTS; ENERGY TRANSITIONS; EXCITON TRANSITIONS; FREESTANDING GAN SUBSTRATES; IN-PLANE; M-PLANE; METAL-ORGANIC VAPOR PHASE EPITAXY; MOLAR FRACTIONS; NEAR BAND EDGE; OSCILLATOR STRENGTHS; POLARIZATION CHARACTERISTICS; POLARIZATION DIRECTION; SURFACE EMISSIONS; SURFACE NORMALS;

ALUMINUM; ANISOTROPY; CRYSTAL GROWTH; ELECTRIC FIELDS; EPILAYERS; GALLIUM NITRIDE; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; POLARIZATION;

GALLIUM ALLOYS;

EID: 76949083523 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3282705 Document Type: Article

Times cited : (13)

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