Annealing-temperature dependence of compositional depth profiles and chemical bonding states of CeOx/LaOx/Si and LaOx/CeOx/Si structure

ECS Transactions

Volumn 25, Issue 6, 2009, Pages 321-326

  Nohira, H ^a   Kon, Y ^a   Kitamura, K ^a   Kouda, M ^b   Kakushima, K ^b   Iwai, H ^b  

^a TOKYO CITY UNIVERSITY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; GATE DIELECTRICS; HIGH-K DIELECTRIC; PHOTOELECTRON SPECTROSCOPY; SILICON; TEMPERATURE DISTRIBUTION;

ANGLE-RESOLVED; ANNEALING TEMPERATURES; CHEMICAL BONDING STATE; COMPOSITIONAL DEPTH PROFILE; OXIDATION STATE; POST DEPOSITION ANNEALING; X RAY PHOTOEMISSION SPECTROSCOPY;

CHEMICAL BONDS;

EID: 76549114740     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3206630     Document Type: Conference Paper

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