Localization and electrical characterization of interconnect open defects

IEEE Transactions on Semiconductor Manufacturing

Volumn 23, Issue 1, 2010, Pages 65-76

  Rodriguez Montanes, Rosa ^a   Arumí, Daniel ^a   Figueras, Joan ^a   Beverloo, Willem ^b   De Vries, Dirk K ^c   Eichenberger, Stefan ^b   Volf, Paul A J ^b  

^a UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

^b NXP SEMICONDUCTORS   (Netherlands)

^c NXP SEMICONDUCTORS   (France)

Author keywords

Metal lines; Open defect; Process monitors; Transmission lines

Indexed keywords

CHARACTERIZATION MEASUREMENT; DEFECT-FREE; ELECTRICAL CHARACTERIZATION; END POINTS; EXPERIMENTAL SETUP; FREQUENCY DOMAIN MEASUREMENT; IN-PROCESS; LINE PARAMETERS; METAL LINE; METAL LINES; OPTICAL BEAM INDUCED RESISTANCE CHANGES; PHASE SHIFT MEASUREMENT; PROCESS PARAMETER VARIATIONS; PROPAGATION CONSTANT; TOPOLOGICAL PARAMETERS; TOTAL LENGTH; TRANSMISSION LINE;

ELECTRIC LINES; ELECTRIC RESISTANCE; PROCESS CONTROL; SMELTING; TRANSMISSION LINE THEORY;

DEFECTS;

EID: 76849100552     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2009.2039187     Document Type: Article

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