High K dielectrics for future CMOS devices

ECS Transactions

Volumn 19, Issue 2, 2009, Pages 579-591

  Robertson, J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; LOW-K DIELECTRIC; NITRIDES; SILICA; SILICON NITRIDE; THRESHOLD VOLTAGE; WORK FUNCTION;

ADVANCED CMOS; ATOMISTIC MODELS; EFFECTIVE WORK FUNCTION; HIGH DIELECTRIC CONSTANTS; HIGH-K OXIDES; INDUSTRIAL GROUPS; METAL GATE STACK; PROPERTIES AND MATERIALS;

HIGH-K DIELECTRIC;

EID: 76549110303     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3122117     Document Type: Conference Paper

References (37)

1. B H Lee, J Oh, H H Tseng, R Jammy, H Huff, Materials Today 9 32 (June 2006);
2. J Robertson, Rep Prog Phys 69 327 (2006).
3. J Robertson, J App Phys 104 12411 (2008)
4. H J Hubbard, D G Schlom, J Mater Res 11 2757 (1996).
5. D G Schlom, J H Haenni, MRS Bull 27 198 (2002)
6. J Robertson, J Vac Sci Technol B 18 1785 (2000)
7. E P Gusev, D A Buchanan, E A Cartier, A Kumar, D DiMaria, S Guha, A Callegari, P C Jamison, D A Neumayer, M Copel, M A Gribelyuk, H Okorn-Schmidt, K Chan, N Bojarczuk, L A Ragnarrson, P Ronsheim, K Rim, R J Fleming, A Moctua, A Ajmera, Tech Digest IEDM(2001) p20.1.1
8. V Narayanan, K Maitra, B P Linder, V K Paruchuri, E P Gusev, P Jamison, M L Steen, D LaTulipe, J Arnold, R Carruthers, D L Lacey, E Carrier, IEEE ED Lett 27 591 (2006)
9. M Chudzik, et al, Tech Digest VLSI(2007) p194
10. K Mistry, et al, Tech Digest IEDM (2007) p10.2;
11. Y C Yeo, T J King, C Hu, J App Phys 92 7266 (2002)
12. C C Hobbs, L R C Fonseca, A Knizhnik, V Dhandapani, S B Samavedam, W J Taylor, J M Grant, L Dip, D H Triyoso, R I Hegde, D C Gilmer, R Garcia, D Roan, H H Tseng, B E White, P J Tobin, IEEE Trans ED 51 971 (2004).
13. ibid 51 978 (2004)
14. J K Schaeffer, C Capasso, L Fonseca, S Samavedam, D Gilmer, Y Liang, O Adetutu, C Hobbs, E Lckowski, R Gregory, Z X Jiang, K Moore, B Y Nguyen, D Roan, B E White, P J Tobin, Tech Digest IEDM (2004), p287
15. V V Afanasev, M Houssa, A Stesmans, M M Heyns, J App Phys 91 3079 (2002)
16. M Koyama, Y Kamimuta, T Ino, A Kancko, S Inumiya, K Eguchi, M Takayanagi, A Nishiyama, Tech Digest IEDM (2004) p499
17. J K Schaeffer, L R C Fonseca, S B Samavedam, Y Liang, P J Tobin, B E White, App Phys Lett 85 1826 (2004)
18. E Carrier, F R McFeely, V Narayanan, P Jamison, M Copel, G Shahidi, Tech Digest VLSI Symp (2005) p15
19. H C Wen, K Choi, P Majhi, H AlShareef, C Huffman, B H Lee, Tech Digest VLSI (2005)
20. H H Tseng et al, Tech Digest IEDM (2004);
21. V Narayanan, V K Paruchuri, N A Bojarczuk, B P Linder, B Doris, Y H Kim, S Zafar, J Stathis, S Brown, J Arnold, M Copel, E Carrier, A Callegari, S Guha, G Shahidi, T C Chen, Tech Digest VLSI symp (2006) p15
22. A W Cowley, S M Sze, J App Phys 36 3212 (1965)
23. W Mönch, Surface Sci 300 928 (1994)
24. K. Tse, J. Robertson, Phys. Rev. Lett. 99 086805 (2007)
25. P W Tasker, J Phys C 12 4977 (1979)
26. K Shiraishi, et al, Jpn. J. Appl. Phys. 43 L1413 (2004)
27. A A Demkov, Phys Rev B 74 085310 (2006)
28. J Robertson, O Sharia, A A Demkov, App Phys Lett 91 132912 (2007)
29. H N AlShareef, M Quevedo-Lopez, H C Wen, R Harris, P Kirsch, P Majhi, B H Lee, R Jammy, D J Lichtenwalner, J S Jur, A I Kingon, App Phys Lett 89 232103 (2006)
30. H N Alshareef, H F Luan, K Choi, H R Harris, H C Wen, M A Quevedo-Lopez, P Majhi, B H Lee, App Phys Lett 88 112114 (2006)
31. Y Yamamoto, K Kita, K Kyuno, A Toriumi, Jpn J App Phys 46 7251 (2007)
32. K Iwamoto, Y Kamimuta, A Ogawa, Y Watanabe, S Migata, T Nabatame, A Toriumi, App Phys Lett 92 132907 (2008)
33. S Guha, V K Paruchuri, M Copel, V Narayanan, Y Y Wang, P E Batson, N A Bojarczuk, B Linder, B Doris, App Phys Lett 90 092902 (2007)
34. P D Kirsch, P Sivasubramani, J Huang, C D Young, M A Quevedo-Lopez, H C Wen, H Alshareef, K Choi, C S Park, B H Lee, H H Tseng, App Phys Lett 92 092901 (2008)
35. H Jagannathan, V Narayanan, S Brown, Proc ECS (2008)
36. K Kita A Toriumi, Tech Digest IEDM(2008) p2.2
37. O. Sharia, A Demkov, G Bersuker, B H Lee, Phys Rev B 75 035306 (2008)