Material dependence of Negative Bias Temperature Instability (NBTI) stress and recovery in SiON p-MOSFETs

ECS Transactions

Volumn 19, Issue 2, 2009, Pages 243-263

  Mahapatra, S ^a   Maheta, V D ^a   Deora, S ^a   Kumar, E N ^a   Purawat, S ^a   Olsen, C ^b   Ahmed, K ^b   Islam, A E ^c   Alam, M A ^c  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b APPLIED MATERIALS INC   (United States)

^c PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; LOW-K DIELECTRIC; MOSFET DEVICES; NEGATIVE TEMPERATURE COEFFICIENT; NITRIDES; RECOVERY; SILICA; SILICON NITRIDE; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE;

GATE INSULATOR; HOLE TRAPPING; INTERFACE TRAP GENERATION; INTERFACE TRAPS; LINEAR DRAIN CURRENT; SELF-CONSISTENT METHOD; SILICON OXYNITRIDES; THRESHOLD VOLTAGE SHIFTS;

NEGATIVE BIAS TEMPERATURE INSTABILITY;

EID: 76549083813     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3122095     Document Type: Conference Paper

References (40)

1. Y. Mitani, in IEDM Tech.Dig., 117 (2004).
2. A. T. Krishnan, C. Chancellor, S. Chakravarthi, P. E. Nicollian, V. Reddy, A. Varghese, R. B. Khamankar, and S. Krishnan, in IEDM Tech. Dig., 705 (2005).
3. D. Varghese, D. Saha, S. Mahapatra, K. Ahmed, F. Nouri, and M. Alam, in IEDM Tech. Dig., 684 (2005).
4. S. Mahapatra, K. Ahmed, D. Varghese, A. E. Islam, G. Gupta, L. Madhav, D. Saha, and M. A. Alam, in Proc. Int. Rel. Phys. Symp., 1 (2007).
5. E. N. Kumar, V. D. Maheta, S. Purawat, A. E. Islam, C. Olsen, K. Ahmed, M. A. Alam, and S. Mahapatra, in IEDM Tech. Dig., 809 (2007).
6. S. Mahapatra and M. A. Alam, IEEE Trans. Device Mater. Rel., 8, 35 (2008).
7. V. D. Maheta, C. Olsen, K. Ahmed, and S. Mahapatra, IEEE Trans. Electron Devices, 55, 1630 (2008).
8. V. D. Maheta, E. N. Kumar, S. Purawat, C. Olsen, K. Ahmed, and S. Mahapatra, IEEE Trans. Electron Devices, 55, 2614 (2008).
9. S. Mahapatra, V. D. Maheta, A. E. Islam, and M. A. Alam, IEEE Trans. Electron Devices, 56, 236 (2009).
10. S. Mahapatra, P. Bharath Kumar and M. A. Alam, in IEDM Tech.Dig., 337 (2003).
11. S. Mahapatra, P. Bharath Kumar and M. A. Alam, IEEE Trans.Electron Devices, 51, 1371 (2004).
12. S. Mahapatra, M. A. Alam, P. B. Kumar, T. R. Dalei, and D. Saha, in IEDM Tech. Dig., 105 (2004).
13. S. S. Tan, T. P. Chen, J. M. Soon, K. P. Loh, C. H. Ang, W. Y. Teo, and L. Chan, in Proc.Solid State Devices Mater., 70 (2003).
14. M. Ershov, S. Saxena, H. Karbasi, S. Winters, S. Minehane, J. Babcock, R. Lindley, P. Clifton, M. Redford, and A. Shibkov, Appl Phys. Lett., 83, 1647 (2003).
15. S. Rangan, N. Mielke, and E. C. Yeh, in IEDM Tech. Dig., 341 (2003).
16. S. Mahapatra and M. A. Alam, in IEDM Tech.Dig, 505 (2002).
17. C. Shen, M. F. Li, C. E. Foo, T. Yang, D. M. Huang, A. Yap, G. S. Samudra, and Y. C. Yeo, in IEDM Tech. Dig., 1 (2006).
18. D. S. Ang, G. A. Du, Y. Z. Hu, S. Wang, and C. M. Ng, in Proc. Int. Rel. Phys. Symp., 737 (2008).
19. M. Denais, C. Parthasarathy, G. Ribes, Y. Rey-Tauriac, N. Revil, A. Bravaix, V. Huard, and F. Perrier, in IEDM Tech. Dig., 109 (2004).
20. V. Huard, C. R. Parthasarathy, A. Bravaix, T. Hugel, C. Guerin, and E. Vincent, IEEE Trans. Device Mater. Rel., 7, 558 (2007).
21. Applied Materials, Private communication.
22. C. S. Olsen, U.S.Patent 017 596 1A1 (2004).
23. J. R. Shallenberger, D. A. Cole, and S. W. Novak, J. Vac. Sci. Technol. A, Vac. Surf. Films, 17, 1086(1999).
24. S. Rauf, S. Lim, and P. L. G. Ventzek, J. Appl. Phys., 98, 024305 (2005).
25. W. C. Lo, S. Y. Wu, S. J. Chang, M. C. Chiang, C. Y. Lin, T. S. Chao, and C. Y. Chang, Jpn. J Appl. Phys, 46, 1124 (2007).
26. A. E. Islam, V. D. Maheta, H. Das, S. Mahapatra, and M. A. Alam, in Proc. Int. Rel. Phys. Symp., 87 (2008).
27. B. Kaczer, V. Arkhipov, R. Degraeve, N. Collaert, G. Groeseneken, and M. Goodwin, in Proc. Int. Rel. Phys. Symp., 381 (2005).
28. A. E. Islam, H. Kufluoglu, D. Varghese, S. Mahapatra, and M. A. Alam, IEEE Trans. Electron Devices, 54, 2143 (2007).
29. M. A. Alam, in IEDM Tech.Dig., 345 (2003).
30. S. Chakravarthi, A. T. Krishnan, V. Reddy, C. F. Machala, and S. Krishnan, in Proc. Int. Rel. Phys. Symp., 273 (2004).
31. T. Grasser, W. Gos, and B. Kaczer, IEEE Trans.Device Mater.Rel., 8, 79 (2008).
32. H. Reisinger, O. Blank, W. Heinrigs, A. Muhlhoff, W. Gustin, and C. Schlunder, in Proc. Int. Rel. Phys. Symp., 448 (2006).
33. C. L. Chen, Y. M. Lin, C. J. Wang, and K. Wu, in Proc. Int. Rel. Phys. Symp., 705 (2005).
34. A. Haggag, G. Anderson, S. Parihar, D. Burnett, G. Abeln, J. Higman, and M. Moosa, in Proc. Int. Rel. Phys. Symp., 452 (2007).
35. A. Neugroschel, G. Bersuker, R. Choi, C. Cochrane, P. Lenahan, D. Heh, C. Young, C. Y. Kang, B. H. Lee, and R. Jammy, in IEDM Tech.Dig, 1 (2006).
36. J. H. Lee, W. H. Wu, A. E. Islam, M. A. Alam, and A. S. Oates, in Proc. Int. Rel. Phys. Symp., 745 (2008).
37. M. L. Reed and J. D. Plummer, J.Appl.Phys., 63, 5776 (1988).
38. M. Alam, in Proc. Int. Rel. Phys. Symp., Tutorial (2006).
39. T. Grasser, W. Gos, V. Sverdlov, and B. Kaczer, in Proc. Int. Rel. Phys. Symp., 268 (2007).
40. S. Deora, V. D. Maheta, A. E. Islam, M. A. Alam and S. Mahapatra, unpublished.