Electrical activation and electron spin coherence of ultralow dose antimony implants in silicon

Applied Physics Letters

Volumn 88, Issue 11, 2006, Pages

  Schenkel, T ^a   Liddle, J A ^a   Persaud, A ^a   Tyryshkin, A M ^b   Lyon, S A ^b   De Sousa, R ^c   Whaley, K B ^c   Bokor, J ^e   Shangkuan, J ^e   Chakarov, I ^d  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b Princeton University   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d Silvaco Data Systems Inc   (United States)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY IMPLANTS; DOPANT DIFFUSION; ELECTRICAL ACTIVATION;

ELECTRIC PROPERTIES; ISOTOPES; PARAMAGNETIC RESONANCE; PASSIVATION; QUANTUM THEORY; SILICON;

ANTIMONY COMPOUNDS;

EID: 33645148799     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2182068     Document Type: Article

References (20)

1. B. E. Kane, Nature (London) 393, 133 (1998);
2. R. Vrijen, E. Yablonovitch, K. Wang, H. W. Jiang, A. Balandin, V. Roychowdhury, T. Mor, and D. DiVincenzo, Phys. Rev. A 62, 012306 (2000).
3. S. Das Sarma, R. de Sousa, X. Hu, and B. Kollier, Solid State Commun. 133, 737 (2005).
4. A. M. Tyryshkin, S. A. Lyon, A. V. Astashkin, and A. M. Raitsimring, Phys. Rev. B 68, 193207 (2003).
5. A. Persaud, S. J. Park, J. A. Liddle, J. Bokor, I. W. Rangelow, and T. Schenkel, Nano Lett. 5, 1087 (2005).
6. A. Persaud, S. J. Park, J. A. Liddle, I. W. Rangelow, J. Bokor, R. Keller, F. I. Allen, D. H. Schneider, and T. Schenkel, Quantum Inf. Process. 3, 233 (2004);
7. S.-J. Park, A. Persaud, J. A. Liddle, J. Nilsson, J. Bokor, D. H. Schneider, I. Rangelow, and T. Schenkel, Microelectron. Eng. 73-74, 695 (2004).
8. D. N. Jamieson, C. Yang, T. Hopf, S. M. Hearne, C. I. Pakes, S. Prawer, M. Mitic, E. Gauja, S. E. Andersen, F. E. Hudson, A. S. Dzurak, and R. G. Clark, Appl. Phys. Lett. 86, 202101 (2005).
9. T. C. Shen, J. S. Kline, T. Schenkel, S. J. Robinson, J.-Y. Ji, C. Yang, R.-R. Du, and J. R. Tucker, J. Vac. Sci. Technol. B 22, 3182 (2004).
10. F. J. Ruess, L. Overbeck, M. Y Simmons, K. E. J. Goh, A. R. Hamilton, T. Hallam, S. R. Schofield, N. J. Curson, and R. G. Clark, Nano Lett. 4, 1969 (2004).
11. Cascade Scientific, Ltd.
12. I. R. Chakarov and R. P. Webb, Radiat. Eff. Defects Solids 130, 447 (1994).
13. N. Cowern and C. Rafferty, MRS Bull. 25, 39 (2000).
14. A. Ural, P. B. Griffin, and J. D. Plummer, J. Appl. Phys. 85, 6440 (1999).
15. J. C. Kim, J.-Y. Ji, J. S. Kline, J. R. Tucker, and T.-C. Shen, Appl. Surf. Sci. 220, 293 (2003).
16. K. Eng, R. N. McFarland, and B. E. Kane, Appl. Phys. Lett. 87, 052106 (2005).
17. E. Yablonoviteh, D. L. Allara, C. C. Chang, T. Gmitter, and T. B. Bright, Phys. Rev. Lett. 57, 249 (1986).
18. L. Pelaz, G. H. Gilmer, V. C. Venezia, H. J. Gossman, M. Jaraiz, and J. Barbolla, Appl. Phys. Lett. 74, 2017 (1999).
19. S. T. Chang, J. K. Wu, and S. A. Lyon, Appl. Phys. Lett. 48, 662 (1986);
20. A. Stesmans and V. V. Afanas'ev, Phys. Rev. B 57, 10030 (1998).