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Volumn 89, Issue 11, 2006, Pages

Scaling of dark count rate with active area in 1.06 μm photon-counting InGaAsP/InP avalanche photodiodes

Author keywords

[No Author keywords available]

Indexed keywords

GEIGER MODE; ON STATE RESISTANCE; OPTICAL COUPLING; PHOTON DETECTION;

EID: 33748692732     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2243800     Document Type: Article
Times cited : (13)

References (12)
  • 10
    • 33748714746 scopus 로고    scopus 로고
    • note
    • 2 diameter of 2.8 μm.
  • 11
    • 33748692022 scopus 로고    scopus 로고
    • note
    • The measured photosensitive region may be larger than the absorber size due to total internal reflection from the sloped sidewalls of the multiplication layer.
  • 12
    • 33748684819 scopus 로고    scopus 로고
    • note
    • The full width at half maximum (FWHM) of the vertical and horizontal PDE profiles varied by up to 1.2 μm.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.