메뉴 건너뛰기




Volumn 60, Issue 1-3, 1997, Pages 98-102

A silicon avalanche photodiode for single optical photon counting in the Geiger mode

Author keywords

Avalanche photodiodes; Geiger mode; Single optical photons

Indexed keywords

AVALANCHE DIODES; ELECTRIC BREAKDOWN; GEIGER COUNTERS; LIGHT ABSORPTION; PARTICLE DETECTORS; PHOTONS;

EID: 0031141094     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(97)01356-3     Document Type: Article
Times cited : (19)

References (9)
  • 5
    • 84975554925 scopus 로고
    • Characterization of silicon avalanche photodiodes for photon correlation measurements 1: Passive quenching
    • R.G.W, Brown, K.D. Ridley and J.G. Rarity, Characterization of silicon avalanche photodiodes for photon correlation measurements 1: passive quenching, Appl. Optics, 25 (1986) 4122-4126.
    • (1986) Appl. Optics , vol.25 , pp. 4122-4126
    • Brown, R.G.W.1    Ridley, K.D.2    Rarity, J.G.3
  • 6
    • 84893800285 scopus 로고
    • Characterization of silicon avalanche photodiodes for photon correlation measurements 2: Active quenching
    • R.G.W. Brown, R. Jones, J.G. Rarity and K.D. Ridley, Characterization of silicon avalanche photodiodes for photon correlation measurements 2: active quenching, Appl. Optics, 26 (1987) 2383-2389.
    • (1987) Appl. Optics , vol.26 , pp. 2383-2389
    • Brown, R.G.W.1    Jones, R.2    Rarity, J.G.3    Ridley, K.D.4
  • 8
    • 0026366219 scopus 로고
    • Trapping phenomena in avalanche photodiodes on nanosecond scale
    • S. Cova, A. Lacaita and G. Ripamonti, Trapping phenomena in avalanche photodiodes on nanosecond scale, IEEE Electron Device Lett., EDL-12 (1991) 685-687.
    • (1991) IEEE Electron Device Lett. , vol.EDL-12 , pp. 685-687
    • Cova, S.1    Lacaita, A.2    Ripamonti, G.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.