SCOPUS 정보 검색 플랫폼

Volumn 90, Issue 7, 2007, Pages

Subthreshold channels at the edges of nanoscale triple-gate silicon transistors

b IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL CAPACITY; COULOMB BLOCKADE; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON; THERMIONIC EMISSION;

COULOMB BLOCKADE OSCILLATIONS; NANOSCALE TRIPLE GATE SILICON TRANSISTORS; SILICON NANOWIRES; SUBTHRESHOLD CHANNELS;

GATES (TRANSISTOR);

EID: 33847174167 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2476343 Document Type: Article

Times cited : (56)

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