Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum well

IEEE Electron Device Letters

Volumn 28, Issue 7, 2007, Pages 603-605

  Jiang, Y ^a,b   Loh, W Y ^a   Chan, Daniel S H ^a,b   Xiong, Y Z ^a   Ren, C ^a,b   Lim, Y F ^a   Lo, G Q ^a   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Electrical stress; Flicker noise; Interface traps; Si SiGe dual quantum well (DQW)

Indexed keywords

DUAL-QUANTUM WELL (DQW); ELECTRICAL STRESS; FLICKER NOISE; NORMALIZED POWER SPECTRAL DENSITY (NPSD);

POWER SPECTRAL DENSITY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPURIOUS SIGNAL NOISE;

MOSFET DEVICES;

EID: 34447277413     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.899763     Document Type: Article

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