1/f noise performance of MOSFETs with HfO2 and metal gate on Ge-on-insulator substrates

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 721-726

  Srinivasan, P ^a,b   Simoen, E ^a   De Jaeger, B ^a   Claeys, C ^a,c   Misra, D ^b  

^a IMEC   (Belgium)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Germanium; HfO2; Interface traps; Low frequency noise; Metal gate; Number fluctuations; Tunneling coefficient

Indexed keywords

CURRENT DENSITY; ELECTRON TRAPS; INTERFACES (MATERIALS); SPURIOUS SIGNAL NOISE;

HFO2; INTERFACE TRAPS; LOW-FREQUENCY NOISE; NUMBER FLUCTUATIONS; TUNNELING COEFFICIENT;

MOSFET DEVICES;

EID: 33845218048     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.08.018     Document Type: Article

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