Direct Measurements of Trap Density in a SiGe/Si Hetero-Interface and Correlation between the Trap Density and Low-Frequency Noise in SiGe-Channel pMOSFETs

IEEE Transactions on Electron Devices

Volumn 50, Issue 12, 2003, Pages 2507-2512

  Tsuchiya, Toshiaki ^a   Imada, Yuji ^a   Murota, Junichi ^b  

^a SHIMANE UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Charge pumping technique; Hetero interface trap; Low frequency noise; MOSFETs; SiGe

Indexed keywords

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE; X RAY DIFFRACTION ANALYSIS;

CHARGE PUMPING TECHNIQUES; HETERO-INTERFACE TRAPS; LOW-FREQUENCY NOISE;

MOSFET DEVICES;

EID: 0346076863     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.819253     Document Type: Article

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