Degradation of low frequency noise in SiGe- and SiGeC-surface channel p -type metal-oxide-semiconductor field effect transistor due to consuming the Si cap

Applied Physics Letters

Volumn 91, Issue 23, 2007, Pages

  Yang, R ^a   Xiong, Y Z ^a   Loh, W Y ^a   Ye, J D ^a   Yu, M B ^a   Shen, C ^a,b   Yang, J J ^a,b   Chua, K T ^a   Hoe, K M ^a   Lo, G Q ^a   Balasubramanian, N ^a   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRON TRAPS; EPILAYERS; PHASE NOISE; SILICON;

HIGHER NOISE AMPLITUDE; INTERFACE TRAP DENSITY; LOW FREQUENCY NOISE;

MOSFET DEVICES;

EID: 36849091832     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2819071     Document Type: Article

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