Low-frequency noise in SiGeC-based pMOSFETs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5470, Issue , 2004, Pages 215-225

  Deen, M Jamal ^a   Marinov, O ^a   Onsongo, D ^b   Dey, S ^b   Banerjee, S ^b  

^a MCMASTER UNIVERSITY   (Canada)

^b The University of Texas at Austin   (United States)

Author keywords

Low frequency noise (LFN); MOSFET; Noise analysis; Si Ge C FETs; SiGe heterostructure FET; SiGeC MOSFET; Strained compressed lattice in IV semiconductor

Indexed keywords

LOW FREQUENCY NOISE (LFN); MOSFETS; NOISE ANALYSIS; SI-GE-C FETS; SIGE HETEROSTRUCTURE FET; SIGEC MOSFET; STRAINED-COMPRESSED LATTICE IN IV SEMICONDUCTOR;

DEGREES OF FREEDOM (MECHANICS); EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; MICROELECTRONICS; NORMAL DISTRIBUTION; PROBABILITY; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE; TERNARY SYSTEMS;

MOSFET DEVICES;

EID: 4344628290     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.548006     Document Type: Conference Paper

References (12)

1. G. Kar, S. Maikap, S. Banerjee, and S. Ray, Series resistance and mobility degradation factor in C-incorporated SiGe heterostructure p-type metalfioxide semiconductor field-effect transistors, Semiconductor Science and Technology, 17, pp. 938-941, 2002.
2. N. Lukyanchikova, M. Petrichuk, N. Garbar, L. Riley and S. Hall, Noise in p-channel SiGe and Si MOSFETs with Gate Oxide Grown by Low Temperature Plasma Anodisation, Proc. EDMO 2001, pp. 181-186, 2001.
3. 0.2: pMOSFETs Under FowlerñNordheim Stress, IEEE Trans. on Electron Devices, 50(4), pp. 1152-1156, 2003.
4. S. Okhonin, M. Py, B. Georgescu, H. Fischer, and L. Risch, DC and Low-Frequency Noise Characteristics of SiGe P-Channel FETís Designed for 0.13-μm Technology, IEEE Trans. on Electron Devices, 46(7), pp. 1514-1517, 1999.
5. xMOSFETís, IEEE Trans. on Electron Devices, 46(7), pp. 1484-1486, 1999.
6. G. Ghibaudo, and J. Chroboczek, On the origin of the LF noise in Si/Ge MOSFETs, Solid-State Electronics, 46, pp. 393-398, 2002.
7. M. J. Deen, and O. Marinov, Effect of Forward and Reverse Substrate Biasing on Low-Frequency Noise in Silicon pMOSFETs, IEEE Trans. on Electron Devices, 49(3), pp. 409-413, 2002.
8. F. Hooge, 1/f Noise Sources, IEEE Transactions on Electron Devices, 41(11), pp. 1926-1935, 1994.
9. M. Sanden, O. Marinov, M. J. Deen, and M. Ostling, Modeling the Variation of the Low-Frequency Noise in Polysilicon Emitter Bipolar Junction Transistors, IEEE Electron Device Letters, 22(5), pp. 242-244, 2001.
10. M. Sanden, O. Marinov, M. J. Deen, and M. Ostling, A New Model for the Low-Frequency Noise and the Noise Level Variation in Polysilicon Emitter BJTs, IEEE Transactions on Electron Devices, 49(3), pp. 514-520, 2002.
11. S. Verdonckt-Vandebroek, E. Crabbe, B. Meyerson, D. Harame, P. Restle, J. Stork, and J. Hohnson, SiGe-Channel Heterojunction p-MOSFETs, IEEE Transactions on Electron Devices, 41(1), pp. 90-101, 1994.
12. y heterostructures using metal oxide semiconductor capacitors, Journal of Applied Physics, 85(2), pp. 978-983, 1999.